CNY17F4M
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS 6DIP
OPTOISO 4.17KV TRANS 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Description
Description
The CNY17F4M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-DIP package. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. The device is designed for low noise susceptibility and has a current transfer ratio (CTR) ranging from 160% to 320%. It is suitable for various applications including power supply regulators and industrial controls.
The CNY17F4M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-DIP package. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. The device is designed for low noise susceptibility and has a current transfer ratio (CTR) ranging from 160% to 320%. It is suitable for various applications including power supply regulators and industrial controls.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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