CNY17F3VM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS 6DIP
OPTOISO 4.17KV TRANS 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Description
Description
The CNY17F3VM from onsemi is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-DIP package and is designed for applications requiring electrical isolation and signal transmission.
The CNY17F3VM from onsemi is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-DIP package and is designed for applications requiring electrical isolation and signal transmission.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
CNY17F3VM is also available from the following manufacturersContact sales
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