CNY17F2M
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS 6DIP
OPTOISO 4.17KV TRANS 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor Output 4170Vrms 1 Channel 6-DIP
Description
Description
The CNY17F2M is an optoisolator featuring a transistor output with a high isolation voltage of 4170 Vrms. It consists of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-DIP package. This device offers a minimum breakdown voltage of 70 V and a current transfer ratio (CTR) ranging from 63% to 125% at specified conditions, making it suitable for various applications.
The CNY17F2M is an optoisolator featuring a transistor output with a high isolation voltage of 4170 Vrms. It consists of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-DIP package. This device offers a minimum breakdown voltage of 70 V and a current transfer ratio (CTR) ranging from 63% to 125% at specified conditions, making it suitable for various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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