CNY171VM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Description
Description
The CNY171VM from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum collector-emitter breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-pin DIP package, ensuring reliable operation in various applications.
The CNY171VM from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum collector-emitter breakdown voltage (BVCEO) of 70 V. This device is housed in a 6-pin DIP package, ensuring reliable operation in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
CNY171VM is also available from the following manufacturersContact sales
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