CNY171TVM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Description
Description
The CNY171TVM is an optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-pin DIP package. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is designed for applications requiring high voltage isolation and low noise susceptibility.
The CNY171TVM is an optoisolator featuring a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a 6-pin DIP package. It offers an isolation voltage of 4170 Vrms and a minimum breakdown voltage (BVCEO) of 70 V. This device is designed for applications requiring high voltage isolation and low noise susceptibility.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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