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CMS30I30A(TE12L,QM

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
CMS30I30A is designed for applications in secondary rectification in switching regulators and reverse-current protection in mobile devices. Its compact size and thermal characteristics make it ideal for use in industrial and consumer electronics where space and efficiency are critical.
Specification
Specification
DIODE SCHOTTKY 30V 3A M-FLAT
DIODE SCHOTTKY 30V 3A M-FLAT
Detailed specification
Detailed specification
Diode 30 V 3A Surface Mount M-FLAT (2.4 mm x 3.8 mm) (0.094 in x 0.150 in)
Diode 30 V 3A Surface Mount M-FLAT (2.4 mm x 3.8 mm) (0.094 in x 0.150 in)
Description
Description
The CMS30I30A is a Schottky Barrier Diode with a maximum repetitive peak reverse voltage of 30 V and an average forward current of 3 A. It features a peak forward voltage of 0.49 V at 3 A and is housed in a compact M-FLAT package (2.4x3.8 mm). This diode is suitable for high-density board assembly.
The CMS30I30A is a Schottky Barrier Diode with a maximum repetitive peak reverse voltage of 30 V and an average forward current of 3 A. It features a peak forward voltage of 0.49 V at 3 A and is housed in a compact M-FLAT package (2.4x3.8 mm). This diode is suitable for high-density board assembly.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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