BUV21G
Manufacturer
SANYO
Data sheet
Data sheet
Specification
Specification
SWITCHMODE NPN SILICON POWER TRA
SWITCHMODE NPN SILICON POWER TRA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 200 V 40 A 8MHz 250 W Through Hole TO-204 (TO-3)
Bipolar (BJT) Transistor NPN 200 V 40 A 8MHz 250 W Through Hole TO-204 (TO-3)
Description
Description
The BUV21G from Sanyo is a high-performance NPN silicon power transistor designed for switch mode applications. This bipolar junction transistor (BJT) operates at a maximum collector-emitter voltage of 200 V and can handle a collector current of up to 40 A, making it suitable for high-power switching applications. With a frequency response of 8 MHz and a power dissipation capability of 250 W, it is ideal for use in power amplifiers and other high-efficiency circuits. The device is housed in a TO-204 (TO-3) package, ensuring robust thermal performance and reliability in demanding environments.
The BUV21G from Sanyo is a high-performance NPN silicon power transistor designed for switch mode applications. This bipolar junction transistor (BJT) operates at a maximum collector-emitter voltage of 200 V and can handle a collector current of up to 40 A, making it suitable for high-power switching applications. With a frequency response of 8 MHz and a power dissipation capability of 250 W, it is ideal for use in power amplifiers and other high-efficiency circuits. The device is housed in a TO-204 (TO-3) package, ensuring robust thermal performance and reliability in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C