BSZ160N10NS3G
Manufacturer
INFINEON
Data sheet
Data sheet
Detailed specification
Detailed specification
MOSFET:er N-Ch 100V 40A TSDSON-8 OptiMOS 3
MOSFET:er N-Ch 100V 40A TSDSON-8 OptiMOS 3
Description
Description
The BSZ160N10NS3 G is an N-channel MOSFET designed for high-frequency switching applications, featuring a maximum drain-source voltage of 100V and a continuous drain current of 40A. It offers low on-state resistance (RDS(on)) of 16 mΩ and is optimized for DC/DC converters, ensuring efficient power management.
The BSZ160N10NS3 G is an N-channel MOSFET designed for high-frequency switching applications, featuring a maximum drain-source voltage of 100V and a continuous drain current of 40A. It offers low on-state resistance (RDS(on)) of 16 mΩ and is optimized for DC/DC converters, ensuring efficient power management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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