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BSZ086P03NS3GATMA1

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
BSZ086P03NS3GATMA1 is designed for battery management and load switching applications in consumer electronics and notebook systems. Its low on-state resistance and high current handling capabilities make it ideal for efficient power management in compact designs.
Specification
Specification
MOSFET P-CH 30V 13.5A/40A TSDSON
MOSFET P-CH 30V 13.5A/40A TSDSON
Detailed specification
Detailed specification
P-Channel 30 V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) surface-mounted PG-TSDSON-8.
P-Channel 30 V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) surface-mounted PG-TSDSON-8.
Description
Description
The BSZ086P03NS3GATMA1 is a P-Channel MOSFET with a maximum VDS of -30V and continuous drain current ratings of 13.5A at Ta and 40A at Tc. It features a low RDS(on) of 8.6 mΩ, making it suitable for applications requiring efficient power management. The device operates within a temperature range of -55°C to 150°C and is housed in a PG-TSDSON-8 package.
The BSZ086P03NS3GATMA1 is a P-Channel MOSFET with a maximum VDS of -30V and continuous drain current ratings of 13.5A at Ta and 40A at Tc. It features a low RDS(on) of 8.6 mΩ, making it suitable for applications requiring efficient power management. The device operates within a temperature range of -55°C to 150°C and is housed in a PG-TSDSON-8 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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