BSS84RFG
Manufacturer
TAIWAN SEMICONDUCTORS
Data sheet
Data sheet
Specification
Specification
-60, -0.15, SINGLE P-CHANNEL
-60, -0.15, SINGLE P-CHANNEL
Detailed specification
Detailed specification
P-Channel 60 V 150mA (Ta) 357mW (Ta) surface-mounted SOT-23
P-Channel 60 V 150mA (Ta) 357mW (Ta) surface-mounted SOT-23
Description
Description
The BSS84 RFG is a P-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of -60 V and a continuous Drain Current (ID) of -150 mA. It features a low on-state resistance (RDS(on)) of 8 Ω at VGS = -10 V, making it suitable for minimizing conductive losses. The device is housed in a SOT-23 package and is RoHS compliant, with applications in low side load switching and general switch circuits.
The BSS84 RFG is a P-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of -60 V and a continuous Drain Current (ID) of -150 mA. It features a low on-state resistance (RDS(on)) of 8 Ω at VGS = -10 V, making it suitable for minimizing conductive losses. The device is housed in a SOT-23 package and is RoHS compliant, with applications in low side load switching and general switch circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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