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BSS159NH6906XTSA1

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
BSS159NH6906XTSA1 is designed for use in industrial and automotive applications, particularly in low-power switching and signal amplification. Its features include a high dv/dt rating, low on-state resistance, and compliance with AEC Q101 standards, making it ideal for automotive electronics and other demanding environments.
Specification
Specification
MOSFET N-CH 60V 230MA SOT23-3
MOSFET N-CH 60V 230MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 230mA (Ta) 360mW (Ta) surface-mounted PG-SOT23
N-Channel 60 V 230mA (Ta) 360mW (Ta) surface-mounted PG-SOT23
Description
Description
The BSS159NH6906XTSA1 is an N-channel MOSFET with a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 230 mA. It features a maximum on-state drain-source resistance (RDS(on)) of 8 Ω and is housed in a PG-SOT-23 package. This device is suitable for applications requiring low power dissipation and high reliability.
The BSS159NH6906XTSA1 is an N-channel MOSFET with a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 230 mA. It features a maximum on-state drain-source resistance (RDS(on)) of 8 Ω and is housed in a PG-SOT-23 package. This device is suitable for applications requiring low power dissipation and high reliability.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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