BSS138RFG
Manufacturer
TAIWAN SEMICONDUCTORS
Data sheet
Data sheet
Specification
Specification
50V, 0.26A, SINGLE N-CHANNEL POW
50V, 0.26A, SINGLE N-CHANNEL POW
Detailed specification
Detailed specification
N-Channel 50 V 260mA (Ta) 357mW (Ta) surface-mounted SOT-23
N-Channel 50 V 260mA (Ta) 357mW (Ta) surface-mounted SOT-23
Description
Description
The BSS138 RFG is an N-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of 50V and a continuous Drain Current (ID) of 260mA. It features a low on-state resistance (RDS(on)) of 2.5Ω at VGS = 10V, making it suitable for efficient power switching applications. The device is housed in a SOT-23 package and is RoHS compliant.
The BSS138 RFG is an N-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of 50V and a continuous Drain Current (ID) of 260mA. It features a low on-state resistance (RDS(on)) of 2.5Ω at VGS = 10V, making it suitable for efficient power switching applications. The device is housed in a SOT-23 package and is RoHS compliant.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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