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BSS138

Manufacturer

ANBON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
BSS138 is ideal for load switching in portable devices, DC/DC converters, and direct logic-level interfaces such as TTL/CMOS. Its advanced trench process technology and high-density cell design ensure ultra-low on-resistance, making it suitable for industrial and consumer electronics applications.
Specification
Specification
N-CHANNEL ENHANCEMENT MODE MOSFE
N-CHANNEL ENHANCEMENT MODE MOSFE
Detailed specification
Detailed specification
N-Channel 50 V 220mA (Ta) 350mW (Ta) surface-mounted SOT-23
N-Channel 50 V 220mA (Ta) 350mW (Ta) surface-mounted SOT-23
Description
Description
The BSS138 is an N-Channel Enhancement Mode MOSFET designed for applications requiring low on-resistance and high efficiency. It features a maximum Drain-Source Voltage (VDS) of 50 V, a continuous Drain Current (ID) of 0.22 A, and a power dissipation of 350 mW. The device is housed in a SOT-23 package, making it suitable for surface-mounted applications.
The BSS138 is an N-Channel Enhancement Mode MOSFET designed for applications requiring low on-resistance and high efficiency. It features a maximum Drain-Source Voltage (VDS) of 50 V, a continuous Drain Current (ID) of 0.22 A, and a power dissipation of 350 mW. The device is housed in a SOT-23 package, making it suitable for surface-mounted applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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