BSS123WRFG
Manufacturer
TAIWAN SEMICONDUCTORS
Data sheet
Data sheet
Specification
Specification
100V, 0.16A, SINGLE N-CHANNEL PO
100V, 0.16A, SINGLE N-CHANNEL PO
Detailed specification
Detailed specification
N-Channel 100 V 160mA (Ta) 298mW (Ta) surface-mounted SOT-323
N-Channel 100 V 160mA (Ta) 298mW (Ta) surface-mounted SOT-323
Description
Description
The BSS123W RFG is a single N-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of 100V and a continuous Drain Current (ID) of 160mA. It features a low RDS(on) of 5Ω at VGS = 10V, making it suitable for minimizing conductive losses. The device is housed in a SOT-323 package and is RoHS compliant, with a total power dissipation of 298mW at 25°C. It is ideal for low side load switching and general switch circuits.
The BSS123W RFG is a single N-Channel Power MOSFET with a maximum Drain-Source Voltage (VDS) of 100V and a continuous Drain Current (ID) of 160mA. It features a low RDS(on) of 5Ω at VGS = 10V, making it suitable for minimizing conductive losses. The device is housed in a SOT-323 package and is RoHS compliant, with a total power dissipation of 298mW at 25°C. It is ideal for low side load switching and general switch circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gustaf or one of our other skilled sales representatives. They'll help you find the right service option.C