BSC190N12NS3G
Manufacturer
INFINEON
Data sheet
Data sheet
Detailed specification
Detailed specification
MOSFET:er N-Ch 120V 44A TDSON-8 OptiMOS 3
MOSFET:er N-Ch 120V 44A TDSON-8 OptiMOS 3
Description
Description
The BSC190N12NS3 G is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 120V and a continuous drain current (ID) of 44A. The device is housed in a TDSON-8 package, optimized for efficient thermal management and minimal on-state resistance (RDS(on)).
The BSC190N12NS3 G is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 120V and a continuous drain current (ID) of 44A. The device is housed in a TDSON-8 package, optimized for efficient thermal management and minimal on-state resistance (RDS(on)).
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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