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BSC190N12NS3G

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
BSC190N12NS3 G is suitable for industrial applications, including power management and motor control. Its high voltage and current ratings make it ideal for use in power supplies, converters, and other high-efficiency circuits requiring robust switching performance.
Detailed specification
Detailed specification
MOSFET:er N-Ch 120V 44A TDSON-8 OptiMOS 3
MOSFET:er N-Ch 120V 44A TDSON-8 OptiMOS 3
Description
Description
The BSC190N12NS3 G is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 120V and a continuous drain current (ID) of 44A. The device is housed in a TDSON-8 package, optimized for efficient thermal management and minimal on-state resistance (RDS(on)).
The BSC190N12NS3 G is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 120V and a continuous drain current (ID) of 44A. The device is housed in a TDSON-8 package, optimized for efficient thermal management and minimal on-state resistance (RDS(on)).
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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