BIDW50N65T
Manufacturer
BOURNS
Data sheet
Data sheet
Specification
Specification
IGBT TRENCH FS 650V 100A TO247
IGBT TRENCH FS 650V 100A TO247
Detailed specification
Detailed specification
IGBT Trench Field Stop 650 V 100 A 416 W Through Hole TO-247
IGBT Trench Field Stop 650 V 100 A 416 W Through Hole TO-247
Description
Description
The BIDW50N65T is a Trench Field Stop IGBT rated for 650 V and 100 A, designed for high voltage and high current applications. It features low Collector-Emitter Saturation Voltage (VCE(sat)) and optimized conduction characteristics, making it suitable for applications such as switch-mode power supplies, uninterruptible power sources, power factor correction, and inverters. The device is RoHS compliant and offers a total power dissipation of 416 W.
The BIDW50N65T is a Trench Field Stop IGBT rated for 650 V and 100 A, designed for high voltage and high current applications. It features low Collector-Emitter Saturation Voltage (VCE(sat)) and optimized conduction characteristics, making it suitable for applications such as switch-mode power supplies, uninterruptible power sources, power factor correction, and inverters. The device is RoHS compliant and offers a total power dissipation of 416 W.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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