BFP650H6327XTSA1
Manufacturer
INFINEON
Data sheet
Data sheet
Specification
Specification
RF TRANS NPN 4.5V 37GHZ SOT343-4
RF TRANS NPN 4.5V 37GHZ SOT343-4
Detailed specification
Detailed specification
RF Transistor NPN 4.5V 150mA 37GHz 500mW surface-mounted PG-SOT343-3D
RF Transistor NPN 4.5V 150mA 37GHz 500mW surface-mounted PG-SOT343-3D
Description
Description
The BFP650H6327XTSA1 is a high linearity, wideband NPN RF bipolar transistor utilizing SiGe:C technology. It operates at a collector-emitter voltage of 4.5V, with a maximum collector current of 150mA and a transition frequency (fT) of 42GHz. This device is designed for low noise and high linearity applications, making it suitable for amplifiers in SDARS receivers, ISM band applications, and multimedia systems. It features a minimum noise figure of 1 dB at 2.4 GHz and a power dissipation of 500mW.
The BFP650H6327XTSA1 is a high linearity, wideband NPN RF bipolar transistor utilizing SiGe:C technology. It operates at a collector-emitter voltage of 4.5V, with a maximum collector current of 150mA and a transition frequency (fT) of 42GHz. This device is designed for low noise and high linearity applications, making it suitable for amplifiers in SDARS receivers, ISM band applications, and multimedia systems. It features a minimum noise figure of 1 dB at 2.4 GHz and a power dissipation of 500mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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