BFP650FH6327XTSA1
Manufacturer
INFINEON
Data sheet
Data sheet
Specification
Specification
RF TRANS NPN 4.5V 42GHZ 4TSFP
RF TRANS NPN 4.5V 42GHZ 4TSFP
Detailed specification
Detailed specification
RF Transistor NPN 4.5V 150mA 42GHz 500mW surface-mounted 4-TSFP
RF Transistor NPN 4.5V 150mA 42GHz 500mW surface-mounted 4-TSFP
Description
Description
The BFP650FH6327XTSA1 is a robust silicon NPN RF bipolar transistor designed for high-frequency applications. It operates at a collector-emitter voltage of 4.5V, with a maximum frequency of 42GHz and a power dissipation of 500mW. This surface-mounted device features a low noise figure of 0.9 dB at 1.8 GHz and a high gain of 21.5 dB, making it suitable for various RF applications.
The BFP650FH6327XTSA1 is a robust silicon NPN RF bipolar transistor designed for high-frequency applications. It operates at a collector-emitter voltage of 4.5V, with a maximum frequency of 42GHz and a power dissipation of 500mW. This surface-mounted device features a low noise figure of 0.9 dB at 1.8 GHz and a high gain of 21.5 dB, making it suitable for various RF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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