BFP183E7764HTSA1
Manufacturer
INFINEON
Data sheet
Data sheet
Specification
Specification
RF TRANS NPN 12V 8GHZ SOT143-4
RF TRANS NPN 12V 8GHZ SOT143-4
Detailed specification
Detailed specification
RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SOT-143-3D
RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SOT-143-3D
Description
Description
The BFP183 is a low noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at a collector current range of 2 mA to 30 mA, with a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device features a maximum collector-emitter voltage (VCEO) of 12 V and a total power dissipation of 250 mW, packaged in a surface-mounted SOT143-4 configuration.
The BFP183 is a low noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at a collector current range of 2 mA to 30 mA, with a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device features a maximum collector-emitter voltage (VCEO) of 12 V and a total power dissipation of 250 mW, packaged in a surface-mounted SOT143-4 configuration.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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