BF570,215
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA BF570 - SMALL SIGNAL BI
NEXPERIA BF570 - SMALL SIGNAL BI
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 15 V 100 mA 490 MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 15 V 100 mA 490 MHz 250 mW surface-mounted TO-236AB
Description
Description
The NEXPERIA BF570 is a small signal bipolar NPN transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 15 V and can handle a collector current of up to 100 mA. With a transition frequency of 490 MHz and a power dissipation capability of 250 mW, this surface-mounted device is ideal for RF amplification and switching applications. Packaged in a TO-236AB form factor, it offers compact dimensions suitable for space-constrained designs, ensuring reliable performance in various electronic circuits.
The NEXPERIA BF570 is a small signal bipolar NPN transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 15 V and can handle a collector current of up to 100 mA. With a transition frequency of 490 MHz and a power dissipation capability of 250 mW, this surface-mounted device is ideal for RF amplification and switching applications. Packaged in a TO-236AB form factor, it offers compact dimensions suitable for space-constrained designs, ensuring reliable performance in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Patrick or one of our other skilled sales representatives. They'll help you find the right service option.C