BDW93CFP
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 100V 12A TO220FP
TRANS NPN DARL 100V 12A TO220FP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 33 W Through Hole TO-220FP
Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 33 W Through Hole TO-220FP
Description
Description
The BDW93CFP is a silicon Epitaxial-Base NPN Darlington transistor designed for power linear and switching applications. It features a maximum collector-emitter voltage of 100 V, a collector current of 12 A, and a total dissipation of 33 W. The device is housed in a TO-220FP fully molded insulated package, ensuring reliable performance in demanding environments.
The BDW93CFP is a silicon Epitaxial-Base NPN Darlington transistor designed for power linear and switching applications. It features a maximum collector-emitter voltage of 100 V, a collector current of 12 A, and a total dissipation of 33 W. The device is housed in a TO-220FP fully molded insulated package, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Jan-Erik or one of our other skilled sales representatives. They'll help you find the right service option.C