logo

BDW93C

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
BDW93C is suitable for use in industrial applications, particularly in power linear and switching equipment. Its robust specifications, including a maximum collector current of 12 A and a total dissipation of 80 W, make it ideal for demanding environments requiring reliable performance.
Specification
Specification
TRANS NPN DARL 100V 12A TO220
TRANS NPN DARL 100V 12A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 80 W Through Hole TO-220
Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 80 W Through Hole TO-220
Description
Description
The BDW93C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, designed for power linear and switching applications. It features a collector-emitter voltage of 80 V, a collector current of 12 A, and a total dissipation of 80 W, housed in a TO-220 package.
The BDW93C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, designed for power linear and switching applications. It features a collector-emitter voltage of 80 V, a collector current of 12 A, and a total dissipation of 80 W, housed in a TO-220 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
BDW93C is also available from the following manufacturers
Contact sales
Contact Jan-Erik or one of our other skilled sales representatives. They'll help you find the right service option.
Jan-Erik Johannessen
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.