BDW93C
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 100V 12A TO220
TRANS NPN DARL 100V 12A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 80 W Through Hole TO-220
Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 80 W Through Hole TO-220
Description
Description
The BDW93C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, designed for power linear and switching applications. It features a collector-emitter voltage of 80 V, a collector current of 12 A, and a total dissipation of 80 W, housed in a TO-220 package.
The BDW93C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, designed for power linear and switching applications. It features a collector-emitter voltage of 80 V, a collector current of 12 A, and a total dissipation of 80 W, housed in a TO-220 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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