BD911
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 100V 15A TO220
TRANS NPN 100V 15A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Through Hole TO-220
Bipolar (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Through Hole TO-220
Description
Description
The BD911 is a silicon Epitaxial-Base NPN power transistor designed for power linear and switching applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 15 A, and a total dissipation of 90 W. The device operates at a transition frequency of 3 MHz and is housed in a TO-220 package, making it suitable for various high-power applications.
The BD911 is a silicon Epitaxial-Base NPN power transistor designed for power linear and switching applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 15 A, and a total dissipation of 90 W. The device operates at a transition frequency of 3 MHz and is housed in a TO-220 package, making it suitable for various high-power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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