BD679A
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MEDIUM POWER NPN DARLINGTON BIPO
MEDIUM POWER NPN DARLINGTON BIPO
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126
Description
Description
The BD679A is a medium power NPN Darlington bipolar transistor designed for linear and switching applications. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) rating of 4 A, and a power dissipation of 40 W. This through-hole TO-126 package device is suitable for various medium power applications, providing high current gain and efficient performance.
The BD679A is a medium power NPN Darlington bipolar transistor designed for linear and switching applications. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) rating of 4 A, and a power dissipation of 40 W. This through-hole TO-126 package device is suitable for various medium power applications, providing high current gain and efficient performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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