BD679
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 80V 4A TO126
TRANS NPN DARL 80V 4A TO126
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126
Description
Description
The BD679 is a silicon NPN Darlington transistor designed for medium-power applications. It features a collector-emitter voltage rating of 80 V, a collector current of 4 A, and a total device dissipation of 40 W. This through-hole device is suitable for general-purpose amplifier applications, providing high DC current gain and monolithic construction.
The BD679 is a silicon NPN Darlington transistor designed for medium-power applications. It features a collector-emitter voltage rating of 80 V, a collector current of 4 A, and a total device dissipation of 40 W. This through-hole device is suitable for general-purpose amplifier applications, providing high DC current gain and monolithic construction.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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