BD241C
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 100V 3A TO220
TRANS NPN 100V 3A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 3 A 40 W Through Hole TO-220
Bipolar (BJT) Transistor NPN 100 V 3 A 40 W Through Hole TO-220
Description
Description
The BD241C is a silicon epitaxial-base NPN transistor designed for medium power linear and switching applications. It features a collector-emitter voltage (VCEO) of 100 V, a collector current (IC) of 3 A, and a total dissipation of 40 W in a TO-220 package. This transistor is suitable for various electronic circuits requiring reliable performance.
The BD241C is a silicon epitaxial-base NPN transistor designed for medium power linear and switching applications. It features a collector-emitter voltage (VCEO) of 100 V, a collector current (IC) of 3 A, and a total dissipation of 40 W in a TO-220 package. This transistor is suitable for various electronic circuits requiring reliable performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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