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BD241C

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
BD241C is utilized in industrial and consumer electronics applications, particularly in medium power linear and switching circuits. Its robust specifications make it ideal for power management, signal amplification, and control systems, ensuring efficient operation in diverse electronic environments.
Specification
Specification
TRANS NPN 100V 3A TO220
TRANS NPN 100V 3A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 3 A 40 W Through Hole TO-220
Bipolar (BJT) Transistor NPN 100 V 3 A 40 W Through Hole TO-220
Description
Description
The BD241C is a silicon epitaxial-base NPN transistor designed for medium power linear and switching applications. It features a collector-emitter voltage (VCEO) of 100 V, a collector current (IC) of 3 A, and a total dissipation of 40 W in a TO-220 package. This transistor is suitable for various electronic circuits requiring reliable performance.
The BD241C is a silicon epitaxial-base NPN transistor designed for medium power linear and switching applications. It features a collector-emitter voltage (VCEO) of 100 V, a collector current (IC) of 3 A, and a total dissipation of 40 W in a TO-220 package. This transistor is suitable for various electronic circuits requiring reliable performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
BD241C is also available from the following manufacturers
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