BD239C
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 100V 2A TO220
TRANS NPN 100V 2A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 2 A 2 W Through Hole TO-220
Bipolar (BJT) Transistor NPN 100 V 2 A 2 W Through Hole TO-220
Description
Description
The BD239C is an NPN power transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 100 V, a collector current of 2 A, and a total power dissipation of 30 W at a case temperature of 25°C. The device is built using planar technology with a 'Base Island' layout, ensuring high gain performance and low saturation voltage.
The BD239C is an NPN power transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 100 V, a collector current of 2 A, and a total power dissipation of 30 W at a case temperature of 25°C. The device is built using planar technology with a 'Base Island' layout, ensuring high gain performance and low saturation voltage.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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