BD139-10
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 1.5A SOT32
TRANS NPN 80V 1.5A SOT32
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32
Description
Description
The BD139-10 is an NPN bipolar junction transistor designed for general-purpose applications. It features a maximum collector-emitter voltage of 80 V, a collector current rating of 1.5 A, and a total power dissipation of 1.25 W. Packaged in SOT-32, it is suitable for audio amplifiers and drivers in complementary circuits.
The BD139-10 is an NPN bipolar junction transistor designed for general-purpose applications. It features a maximum collector-emitter voltage of 80 V, a collector current rating of 1.5 A, and a total power dissipation of 1.25 W. Packaged in SOT-32, it is suitable for audio amplifiers and drivers in complementary circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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