BD13810STU
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
POWER BIPOLAR TRANSISTOR, 1.5A,
POWER BIPOLAR TRANSISTOR, 1.5A,
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 1.5 A 1.25 W Through Hole TO-126-3
Bipolar (BJT) Transistor PNP 60 V 1.5 A 1.25 W Through Hole TO-126-3
Description
Description
The BD13810STU is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector current of 1.5 A and a collector-emitter voltage rating of 60 V, this transistor is suitable for medium power applications. It features a power dissipation capability of 1.25 W, ensuring efficient thermal management. Packaged in a TO-126-3 through-hole configuration, it is ideal for PCB mounting in consumer electronics, automotive, and industrial control systems.
The BD13810STU is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector current of 1.5 A and a collector-emitter voltage rating of 60 V, this transistor is suitable for medium power applications. It features a power dissipation capability of 1.25 W, ensuring efficient thermal management. Packaged in a TO-126-3 through-hole configuration, it is ideal for PCB mounting in consumer electronics, automotive, and industrial control systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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