BD13616S
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 45V 1.5A TO126-3
TRANS PNP 45V 1.5A TO126-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 45 V 1.5 A 1.25 W Through Hole TO-126-3
Bipolar (BJT) Transistor PNP 45 V 1.5 A 1.25 W Through Hole TO-126-3
Description
Description
The BD13616S is a PNP bipolar junction transistor (BJT) designed for medium power linear and switching applications. It features a maximum collector-emitter voltage (VCEO) of 45V and a collector current (IC) rating of 1.5A. The device is housed in a TO-126-3 package and offers a power dissipation of 1.25W at 25°C. With a junction temperature rating of 150°C, it is suitable for various electronic applications requiring reliable performance.
The BD13616S is a PNP bipolar junction transistor (BJT) designed for medium power linear and switching applications. It features a maximum collector-emitter voltage (VCEO) of 45V and a collector current (IC) rating of 1.5A. The device is housed in a TO-126-3 package and offers a power dissipation of 1.25W at 25°C. With a junction temperature rating of 150°C, it is suitable for various electronic applications requiring reliable performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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