BCW89,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 0.1A TO236AB
TRANS PNP 60V 0.1A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 100 mA 150MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 60 V 100 mA 150MHz 250 mW surface-mounted TO-236AB
Description
Description
The BCW89 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a maximum collector-emitter voltage of 60 V and a collector current of 100 mA, with a DC current gain (hFE) of 90 at VCE = -5 V. This surface-mounted device (SMD) is housed in a compact TO-236AB package, suitable for various electronic circuits requiring low power dissipation of 250 mW.
The BCW89 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a maximum collector-emitter voltage of 60 V and a collector current of 100 mA, with a DC current gain (hFE) of 90 at VCE = -5 V. This surface-mounted device (SMD) is housed in a compact TO-236AB package, suitable for various electronic circuits requiring low power dissipation of 250 mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.C