BCP56-16
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT SOT223 80V 1000MA NPN 2W
BJT SOT223 80V 1000MA NPN 2W
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 1.3 W surface-mounted SOT-223
Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 1.3 W surface-mounted SOT-223
Description
Description
The BCP56-16 is a high-performance NPN bipolar junction transistor (BJT) in a surface mount SOT-223 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 1 A, and a power dissipation (Ptot) of 2 W. With a gain-bandwidth product of 100 MHz and a maximum junction temperature of 150°C, it is suitable for signal processing, switching, and amplification applications.
The BCP56-16 is a high-performance NPN bipolar junction transistor (BJT) in a surface mount SOT-223 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 1 A, and a power dissipation (Ptot) of 2 W. With a gain-bandwidth product of 100 MHz and a maximum junction temperature of 150°C, it is suitable for signal processing, switching, and amplification applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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