BC860C
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT SOT23 45V 100MA PNP 0.25W
BJT SOT23 45V 100MA PNP 0.25W
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Description
Description
The BC860C is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of -45V and a collector current (IC) of -100mA. It features a power dissipation of 250mW and a gain (hFE) of approximately 180 to 520. This transistor operates at a maximum junction temperature of 150°C and is suitable for general-purpose applications including signal processing, switching, and amplification.
The BC860C is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of -45V and a collector current (IC) of -100mA. It features a power dissipation of 250mW and a gain (hFE) of approximately 180 to 520. This transistor operates at a maximum junction temperature of 150°C and is suitable for general-purpose applications including signal processing, switching, and amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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