BC859B,215
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA BC859B - SMALL SIGNAL B
NEXPERIA BC859B - SMALL SIGNAL B
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW surface-mounted TO-236AB
Description
Description
The NEXPERIA BC859B is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. With a transition frequency of 100 MHz and a total power dissipation of 250 mW, it is suitable for low noise input stages in audio frequency equipment. The device is housed in a surface-mounted SOT23 package, ensuring compact integration in electronic circuits.
The NEXPERIA BC859B is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. With a transition frequency of 100 MHz and a total power dissipation of 250 mW, it is suitable for low noise input stages in audio frequency equipment. The device is housed in a surface-mounted SOT23 package, ensuring compact integration in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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