BC857W,135
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NOW NEXPERIA BC857W - SMALL SIGN
NOW NEXPERIA BC857W - SMALL SIGN
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 200 mW surface-mounted SOT-323
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 200 mW surface-mounted SOT-323
Description
Description
The NXP BC857W is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 45 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this transistor is suitable for various signal amplification tasks. Packaged in a compact SOT-323 surface mount configuration, it is ideal for space-constrained applications in consumer electronics and communication devices.
The NXP BC857W is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 45 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this transistor is suitable for various signal amplification tasks. Packaged in a compact SOT-323 surface mount configuration, it is ideal for space-constrained applications in consumer electronics and communication devices.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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