BC857BQAZ
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA BC857 - 45 V, 100 MA PN
NEXPERIA BC857 - 45 V, 100 MA PN
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 280 mW surface-mounted DFN1010D-3
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 280 mW surface-mounted DFN1010D-3
Description
Description
The NXP Semiconductors BC857 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a collector-emitter voltage of -45 V and a collector current of -100 mA, with a maximum power dissipation of 280 mW. The device features a low profile DFN1010D-3 package, suitable for surface mounting, and offers three current gain selections ranging from 125 to 800.
The NXP Semiconductors BC857 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a collector-emitter voltage of -45 V and a collector current of -100 mA, with a maximum power dissipation of 280 mW. The device features a low profile DFN1010D-3 package, suitable for surface mounting, and offers three current gain selections ranging from 125 to 800.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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