BC856W,115
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA BC856W - SMALL SIGNAL B
NEXPERIA BC856W - SMALL SIGNAL B
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 65 V 100 mA 100 MHz 200 mW surface-mounted SOT-323
Bipolar (BJT) Transistor PNP 65 V 100 mA 100 MHz 200 mW surface-mounted SOT-323
Description
Description
The NEXPERIA BC856W is a PNP bipolar junction transistor (BJT) designed for small signal applications. It features a maximum collector-emitter voltage of 65 V, a collector current rating of 100 mA, and a transition frequency of 100 MHz, making it suitable for high-frequency applications. The device is housed in a compact SOT-323 surface mount package, allowing for efficient space utilization on printed circuit boards. With a maximum power dissipation of 200 mW, it is ideal for low-power amplification and switching tasks in various electronic circuits.
The NEXPERIA BC856W is a PNP bipolar junction transistor (BJT) designed for small signal applications. It features a maximum collector-emitter voltage of 65 V, a collector current rating of 100 mA, and a transition frequency of 100 MHz, making it suitable for high-frequency applications. The device is housed in a compact SOT-323 surface mount package, allowing for efficient space utilization on printed circuit boards. With a maximum power dissipation of 200 mW, it is ideal for low-power amplification and switching tasks in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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