BC856BW
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
TRANS PNP 65V 0.1A SOT323
TRANS PNP 65V 0.1A SOT323
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW surface-mounted SOT-323
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW surface-mounted SOT-323
Description
Description
The BC856BW is a PNP bipolar junction transistor designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of 65V, a collector current (IC) of 100mA, and a power dissipation (Ptot) of 200mW. With a gain (hFE) ranging from 180 to 520 and a transition frequency (fT) of 100MHz, it is suitable for signal processing, switching, and amplification tasks. The device is housed in a SOT-323 surface mount package, ensuring compact integration in electronic circuits.
The BC856BW is a PNP bipolar junction transistor designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of 65V, a collector current (IC) of 100mA, and a power dissipation (Ptot) of 200mW. With a gain (hFE) ranging from 180 to 520 and a transition frequency (fT) of 100MHz, it is suitable for signal processing, switching, and amplification tasks. The device is housed in a SOT-323 surface mount package, ensuring compact integration in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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