BC850C
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT SOT-23 45V 100MA
BJT SOT-23 45V 100MA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 45 V 100 mA 300 MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Bipolar (BJT) Transistor NPN 45 V 100 mA 300 MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Description
Description
The BC850C is a general-purpose NPN bipolar transistor in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of 45V and a collector current (IC) of 100mA. It features a maximum power dissipation of 250mW and a gain-bandwidth product of 300MHz. The transistor is suitable for signal processing, switching, and amplification applications, with a maximum junction temperature of 150°C.
The BC850C is a general-purpose NPN bipolar transistor in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of 45V and a collector current (IC) of 100mA. It features a maximum power dissipation of 250mW and a gain-bandwidth product of 300MHz. The transistor is suitable for signal processing, switching, and amplification applications, with a maximum junction temperature of 150°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Bengt or one of our other skilled sales representatives. They'll help you find the right service option.C