BC850B
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT SOT23 45V 100MA NPN 0.25W
BJT SOT23 45V 100MA NPN 0.25W
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 45 V 100 mA 300 MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Bipolar (BJT) Transistor NPN 45 V 100 mA 300 MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Description
Description
The BC850B is a general-purpose NPN bipolar junction transistor (BJT) in a SOT-23 package, rated for a collector-emitter voltage (VCEO) of 45V and a collector current (IC) of 100mA. It features a power dissipation of 250mW and a gain-bandwidth product of 300MHz. The device is suitable for signal processing, switching, and amplification applications, with a maximum junction temperature of 150°C.
The BC850B is a general-purpose NPN bipolar junction transistor (BJT) in a SOT-23 package, rated for a collector-emitter voltage (VCEO) of 45V and a collector current (IC) of 100mA. It features a power dissipation of 250mW and a gain-bandwidth product of 300MHz. The device is suitable for signal processing, switching, and amplification applications, with a maximum junction temperature of 150°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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