BC848B,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 30V 0.1A TO236AB
TRANS NPN 30V 0.1A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 250 mW surface-mounted TO-236AB
Description
Description
The BC848B is a general-purpose NPN bipolar transistor designed for switching and amplification applications. It operates with a collector-emitter voltage (VCEO) of 30 V and a collector current (IC) of 100 mA. This surface-mounted device (SMD) comes in a TO-236AB package and features a DC current gain (hFE) ranging from 200 to 450, with a transition frequency (fT) of 100 MHz. It is suitable for various electronic applications requiring compact and efficient performance.
The BC848B is a general-purpose NPN bipolar transistor designed for switching and amplification applications. It operates with a collector-emitter voltage (VCEO) of 30 V and a collector current (IC) of 100 mA. This surface-mounted device (SMD) comes in a TO-236AB package and features a DC current gain (hFE) ranging from 200 to 450, with a transition frequency (fT) of 100 MHz. It is suitable for various electronic applications requiring compact and efficient performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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