BC807-25QAZ
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
BC807-25QA - 45 V, 500 MA PNP GE
BC807-25QA - 45 V, 500 MA PNP GE
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 45 V 500 mA 80 MHz 900 mW surface-mounted DFN1010D-3
Bipolar (BJT) Transistor PNP 45 V 500 mA 80 MHz 900 mW surface-mounted DFN1010D-3
Description
Description
The BC807-25QA is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It features a collector-emitter voltage of 45 V, a collector current of 500 mA, and a transition frequency of 80 MHz. Packaged in a DFN1010D-3 (SOT1215) surface-mounted device, it offers low height and high performance for mobile and switching applications.
The BC807-25QA is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It features a collector-emitter voltage of 45 V, a collector current of 500 mA, and a transition frequency of 80 MHz. Packaged in a DFN1010D-3 (SOT1215) surface-mounted device, it offers low height and high performance for mobile and switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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