BC52-10PASX
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA BC52PAS - 60V, 1 A PNP
NEXPERIA BC52PAS - 60V, 1 A PNP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 1 A 145 MHz 420 mW surface-mounted DFN2020D-3
Bipolar (BJT) Transistor PNP 60 V 1 A 145 MHz 420 mW surface-mounted DFN2020D-3
Description
Description
The NEXPERIA BC52PAS is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 60V and a continuous collector current rating of 1A, this transistor operates effectively at frequencies up to 145MHz. It has a power dissipation capability of 420mW, making it suitable for compact designs. The device is housed in a surface mount DFN2020D-3 package, ensuring ease of integration into modern electronic circuits while maintaining a small footprint.
The NEXPERIA BC52PAS is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 60V and a continuous collector current rating of 1A, this transistor operates effectively at frequencies up to 145MHz. It has a power dissipation capability of 420mW, making it suitable for compact designs. The device is housed in a surface mount DFN2020D-3 package, ensuring ease of integration into modern electronic circuits while maintaining a small footprint.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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