BC517RL1G
Manufacturer
ON SEMICONDUCTOR
Specification
Specification
TRANS NPN DARL 30V 1A TO92
TRANS NPN DARL 30V 1A TO92
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 30 V 1 A 200MHz 1.5 W Through Hole TO-92 (TO-226)
Bipolar (BJT) Transistor NPN - Darlington 30 V 1 A 200MHz 1.5 W Through Hole TO-92 (TO-226)
Description
Description
The BC517RL1G is a high-performance NPN Darlington transistor designed for various amplification and switching applications. With a maximum collector-emitter voltage of 30V and a continuous collector current rating of 1A, this device operates effectively at frequencies up to 200MHz. It is housed in a TO-92 package, making it suitable for through-hole mounting in compact electronic designs. The transistor can handle a power dissipation of 1.5W, ensuring reliable operation in demanding environments. Its high gain characteristics make it ideal for low-signal applications.
The BC517RL1G is a high-performance NPN Darlington transistor designed for various amplification and switching applications. With a maximum collector-emitter voltage of 30V and a continuous collector current rating of 1A, this device operates effectively at frequencies up to 200MHz. It is housed in a TO-92 package, making it suitable for through-hole mounting in compact electronic designs. The transistor can handle a power dissipation of 1.5W, ensuring reliable operation in demanding environments. Its high gain characteristics make it ideal for low-signal applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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