BAT17,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
RF DIODE SCHOTTKY 4V TO236AB
RF DIODE SCHOTTKY 4V TO236AB
Detailed specification
Detailed specification
RF Diode Schottky - Single 4V (0.16 in) 30 mA (0.001 in) TO-236AB
RF Diode Schottky - Single 4V (0.16 in) 30 mA (0.001 in) TO-236AB
Description
Description
The BAT17 is a Schottky barrier diode designed for RF applications, featuring a low forward voltage of 350 mV at 0.1 mA and a maximum continuous forward current of 30 mA. Packaged in a compact TO-236AB (SOT23) surface-mounted configuration, it offers low capacitance of 1 pF, making it suitable for high-frequency applications.
The BAT17 is a Schottky barrier diode designed for RF applications, featuring a low forward voltage of 350 mV at 0.1 mA and a maximum continuous forward current of 30 mA. Packaged in a compact TO-236AB (SOT23) surface-mounted configuration, it offers low capacitance of 1 pF, making it suitable for high-frequency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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