BAT15099E6327HTSA1
Manufacturer
INFINEON
Data sheet
Data sheet
Specification
Specification
DIODE SCHOTTKY 4V 100MW SOT143-4
DIODE SCHOTTKY 4V 100MW SOT143-4
Detailed specification
Detailed specification
RF Diode Schottky - 2 Independent 4V 110 mA 100 mW PG-SOT-143-3D
RF Diode Schottky - 2 Independent 4V 110 mA 100 mW PG-SOT-143-3D
Description
Description
The BAT15099E6327HTSA1 is a Schottky diode designed for RF applications, featuring two independent diodes with a maximum reverse voltage of 4V and a forward current rating of 110 mA. This component is housed in a compact PG-SOT-143-3D package, making it suitable for space-constrained designs. With a power dissipation capability of 100 mW, it is ideal for high-frequency switching applications. The Schottky construction ensures low forward voltage drop and fast switching speeds, enhancing overall circuit efficiency.
The BAT15099E6327HTSA1 is a Schottky diode designed for RF applications, featuring two independent diodes with a maximum reverse voltage of 4V and a forward current rating of 110 mA. This component is housed in a compact PG-SOT-143-3D package, making it suitable for space-constrained designs. With a power dissipation capability of 100 mW, it is ideal for high-frequency switching applications. The Schottky construction ensures low forward voltage drop and fast switching speeds, enhancing overall circuit efficiency.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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