BAT1502ELE6327XTMA1
Manufacturer
INFINEON
Data sheet
Data sheet
Specification
Specification
DIODE SCHOTT 4V 110MA TSLP-2-19
DIODE SCHOTT 4V 110MA TSLP-2-19
Detailed specification
Detailed specification
RF Diode Schottky - Single 4V 110 mA 100 mW PG-TSLP-2-19
RF Diode Schottky - Single 4V 110 mA 100 mW PG-TSLP-2-19
Description
Description
The Infineon BAT1502ELE6327XTMA1 is a silicon RF Schottky diode designed for high-frequency applications up to 12 GHz. It features a low barrier height, low forward voltage (VF typ. 0.25 V at 1 mA), and low junction capacitance (C typ. 0.2 pF at VR = 0 V). The device is housed in a TSLP-2-19 package (1 mm x 0.6 mm x 0.31 mm) and is suitable for use in mobile devices and embedded systems, providing integrated over-voltage protection with a maximum reverse voltage of 4 V and forward current of 110 mA.
The Infineon BAT1502ELE6327XTMA1 is a silicon RF Schottky diode designed for high-frequency applications up to 12 GHz. It features a low barrier height, low forward voltage (VF typ. 0.25 V at 1 mA), and low junction capacitance (C typ. 0.2 pF at VR = 0 V). The device is housed in a TSLP-2-19 package (1 mm x 0.6 mm x 0.31 mm) and is suitable for use in mobile devices and embedded systems, providing integrated over-voltage protection with a maximum reverse voltage of 4 V and forward current of 110 mA.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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