BAS21QB-QZ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
DIODE GP 200V 250MA DFN1110D-3
DIODE GP 200V 250MA DFN1110D-3
Detailed specification
Detailed specification
Diode 200 V 250mA surface-mounted, Wettable Flank DFN1110D-3
Diode 200 V 250mA surface-mounted, Wettable Flank DFN1110D-3
Description
Description
The BAS21QB-QZ is a high-voltage switching diode encapsulated in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mounted device package. It features a reverse voltage of 200 V, forward current of 250 mA, and a low reverse recovery time (trr ≤ 50 ns). This diode is suitable for high-speed switching, voltage clamping, and reverse polarity protection applications.
The BAS21QB-QZ is a high-voltage switching diode encapsulated in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mounted device package. It features a reverse voltage of 200 V, forward current of 250 mA, and a low reverse recovery time (trr ≤ 50 ns). This diode is suitable for high-speed switching, voltage clamping, and reverse polarity protection applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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