BAS16THR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
DIODE GP 100V 215MA TO236AB
DIODE GP 100V 215MA TO236AB
Detailed specification
Detailed specification
Diode 100 V 215mA surface-mounted TO-236AB
Diode 100 V 215mA surface-mounted TO-236AB
Description
Description
The BAS16THR is a high-speed switching diode encapsulated in a TO-236AB (SOT23) surface-mounted package. It features a repetitive peak reverse voltage (VRRM) of 100 V, forward current (IF) of 215 mA, and a reverse recovery time (trr) of ≤ 4 ns. This diode is suitable for high-speed and general-purpose switching applications, with low leakage current and high-temperature operation up to 175 °C.
The BAS16THR is a high-speed switching diode encapsulated in a TO-236AB (SOT23) surface-mounted package. It features a repetitive peak reverse voltage (VRRM) of 100 V, forward current (IF) of 215 mA, and a reverse recovery time (trr) of ≤ 4 ns. This diode is suitable for high-speed and general-purpose switching applications, with low leakage current and high-temperature operation up to 175 °C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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