BAS16LS-QYL
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
DIODE GP 100V 215MA DFN1006BD-2
DIODE GP 100V 215MA DFN1006BD-2
Detailed specification
Detailed specification
Diode 100 V 215mA surface-mounted DFN1006BD-2
Diode 100 V 215mA surface-mounted DFN1006BD-2
Description
Description
The BAS16LS-Q is a high-speed switching diode encapsulated in a leadless ultra-small DFN1006BD-2 package. It features a repetitive peak reverse voltage (VRRM) of 100 V, a forward current (IF) of 215 mA, and a reverse recovery time (trr) of ≤ 4 ns. This diode is suitable for high-speed and general-purpose switching applications, with low leakage current and capacitance, making it ideal for automotive and other electronic applications.
The BAS16LS-Q is a high-speed switching diode encapsulated in a leadless ultra-small DFN1006BD-2 package. It features a repetitive peak reverse voltage (VRRM) of 100 V, a forward current (IF) of 215 mA, and a reverse recovery time (trr) of ≤ 4 ns. This diode is suitable for high-speed and general-purpose switching applications, with low leakage current and capacitance, making it ideal for automotive and other electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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